| PART |
Description |
Maker |
| HN3C03FU E002003 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (TV TUNER/ UHF CONVERTER/ UHF RF AMPLIFIER APPLICATIONS)
TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| MICRF007BM MICRF007BMNBSP MICRF007 |
QwikRadioTM Low-Power UHF Receiver
MICRF007 Low Power UHF Receiver
From old datasheet system
QwikRadio Low-Power UHF Receiver SPECIALTY CONSUMER CIRCUIT, PDSO8
|
http://
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
|
| LA7170M LA7170 |
RF Modulator for UHF Band (Supports SECAM)(UHF（甚高频）频RF调制器（支持SECAM 射频调制器，用于UHF频带（支SECAM制式）（超高频（甚高频）频带射频调制器（支持SECAM制式））
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 3SK300 3SK300ZR-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Comchip Technology Co., Ltd.
Renesas Electronics Corporation
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BLV948 |
UHF push-pull power transistor
RF POWER TRANSISTORS FOR UHF
|
New Jersey Semi-Conductor P...
New Jersey Semiconductors
|
| 2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2S |
For UHF tuner, MIXER and OSC.
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 12V的五（巴西）总裁| 30mA的一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
